Sara Gonzalez seminar
@ - 12:00
We are pleased to welcome at ISCR (Solid State Chemistry and Materials team), Sara Gonzalez, Researcher, Institut des Nanotechnologies de Lyon.
Abstract
Ferroelectric and antiferroelectric materials are among the most promising candidates for future low-power electronic technologies, offering functionalities that range from non-volatile memory and neuromorphic computing to sensing and energy-efficient information processing. As device dimensions approach the nanometer scale, their behavior becomes increasingly governed by subtle structural, chemical, and electronic phenomena occurring within ultrathin films and, critically, at buried electrode/ferroelectric interfaces. Understanding and controlling these mechanisms remains a major challenge for both fundamental condensed matter physics and device engineering.
This seminar presents how laboratory and synchrotron-based X-ray techniques can be combined to investigate structure, electronic properties, and defects in ferroic oxide thin films. By combining X-ray scattering and spectroscopy, complementary information is obtained on phase stability, polarization-related distortions, electronic structure, and defect chemistry in both perovskite ferroelectrics and hafnia-based systems.
Particular attention is given to the role of strain, phase competition, oxygen vacancies, and interfaces in determining the functional properties of ultrathin films. By correlating structural and spectroscopic information with macroscopic electrical measurements, the microscopic origins of ferroic behavior in these systems can be better understood.